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Molecular Dynamics Prediction of Thermal Conductivity of GaN Films and Wires at Realistic Length Scales

机译:GaN薄膜和纳米薄膜导热系数的分子动力学预测   现实长度尺度的电线

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摘要

Recent molecular dynamics simulation methods have enabled thermalconductivity of bulk materials to be estimated. In these simulations, periodicboundary conditions are used to extend the system dimensions to thethermodynamic limit. Such a strategy cannot be used for nanostructures withfinite dimensions which are typically much larger than it is possible tosimulate directly. To bridge the length scales between the simulated and theactual nanostructures, we perform large-scale molecular dynamics calculationsof thermal conductivities at different system dimensions to examine a recentlydeveloped conductivity vs. dimension scaling theory for both film and wireconfigurations. We demonstrate that by an appropriate application of thescaling law, reliable interpolations can be used to accurately predict thermalconductivity of films and wires as a function of film thickness or wire radiusat realistic length scales from molecular dynamics simulations. We apply thismethod to predict thermal conductivities for GaN wurtzite nanostructures.
机译:最近的分子动力学模拟方法已使大块材料的导热性得以估计。在这些模拟中,使用周期边界条件将系统尺寸扩展到热力学极限。这种策略不能用于尺寸通常比直接模拟大得多的有限尺寸的纳米结构。为了在模拟的纳米结构和实际的纳米结构之间架起长度尺度,我们对不同系统尺寸的热导率进行了大规模的分子动力学计算,以检验最近开发的薄膜和导线配置的电导率与尺寸缩放理论。我们证明,通过适当应用定标律,可靠的插值可用于根据分子动力学模拟在实际长度尺度上准确地预测薄膜和金属丝的导热系数,作为薄膜厚度或金属丝半径的函数。我们将该方法用于预测GaN纤锌矿纳米结构的热导率。

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